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A gaseous silicon precursor is a chemical compound existing in gaseous form that contains an Si atom. As the name suggests, the substance accompanies the initial stage of the silicon production reaction. One known precursor is silicon trichloride, a component in the production of epitaxial layers from SiC.
This process involves the deposition of layers of the element on substrates, resulting in the formation of thin-layered structures with controlled purity and chemical composition. It is used in the production processes of semiconductors, such as silicon dies for integrated circuits, LEDs or photovoltaic cells.
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Przemysław Kanikowski
email: iod.rokita@pcc.eu